IGBT
Showing all 13 resultsSorted by price: low to high
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IGBT
FGA25N120ANTD IGBT – 1200V 25A NPT Trench IGBT
Product Highlights
- NPT Trench Technology, Positive Temperature Coefficient
- ? Low Saturation Voltage: VCE(sat), typ = 2.0 V @ IC = 25 A and TC = 25?C
- ? Low Switching Loss: Eoff, type = 0.96 mJ @ IC = 25 A and TC = 25?C
- ? Extremely Enhanced Avalanche Capability
SKU: RM001051 -
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IGBT
IGP15N60T IGBT – 600V 15A Low Loss IGBT
Product Highlights:
- Very low VCE (sat) 1.5V (typ.)
- Maximum Junction Temperature 175?C
- Short circuit withstand time 5?s
- Positive temperature coefficient in VCE(sat)
- PBS-free lead plating; RoHS compliant
- Qualified according to JEDEC1 for target applications
SKU: RM008193 -
IGBT
G15N60 – Fast IGBT
Product highlights:
- Short circuit withstand time ? 10 ?s
- NPT-Technology for 600V applications offers:
- very tight parameter distribution
- high ruggedness, temperature stable behavior
- parallel switching capability
- Qualified according to JEDEC1 for target applications
- Pb-free lead plating; RoHS compliant
SKU: RM013181 -
IGBT
IRG4BC30UD IGBT – 600V Ultrafast 8-60 kHz Copack IGBT
Product Highlights
- Ultrafast: Optimized for high operating frequencies 8-40 kHz in hard switching, 200kHz in resonant mod
- Generation 4 IGBT design provides tighter para- meter distribution and higher efficiency than Generation
- IGBT co-packaged with HEXFREDTM ultrafast, ultra- soft-recovery anti-parallel diodes for use in bridge configurations
- Industry standard TO-220AB package
SKU: RM001449 -
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IGBT
CT60AM-18F IGBT – 900V 60A High Voltage Current IGBT
Product Highlights:
- VCES : 900 V
- IC : 60 A
- Integrated fast-recovery diode
- Peak gate-emitter voltage 30V
- Collector current- 60A
- Collector current (Pulse)- 120A
- Maximum Collector-Emitter Voltage |Vce|- 900V
- Emitter current -40A
- Junction temperature – 40?C – +150?C
- Storage temperature -40?C – +150?C
SKU: RM000425 -
IGBT
IRG4PC40UD IGBT – 600V UltraFast 8-60 kHz Copack IGBT
Product Highlights:
- Ultrafast: Optimized for high operating frequencies 8-40 kHz in hard switching, 200kHz in resonant mode
- Generation 4 IGBT design provides tighter para- meter distribution and higher efficiency than Generation 3
- IGBT co-packaged with HEXFREDTM ultrafast, ultra- soft-recovery anti-parallel diodes for use in bridge configurations
- Industry standard TO-247AC package .
SKU: RM018109 -
IGBT
FSBB20CH60 IGBT Module – 600V 20A Power Conversion IGBT Module
Product Highlights
- Very low thermal resistance by using DBC
- ? 600V-20A 3-phase IGBT inverter bridge including control ICs for gate driving and protection
- ? Three separate negative DC-link terminals for inverter current sensing applications
- ? Single-grounded power supply for built-in HVICs
- ? Isolation rating of 2500Vrms/min.
SKU: RM008261 -
IGBT
STGIPS20K60 – GIPS20K60 IGBT Module – 600V 17A Intelligent IGBT Power Module
Product Highlights:
- IPM 18 A, 600 V 3-phase IGBT inverter bridge including control ICs for gate driving and freewheeling diodes
- Short-circuit rugged IGBTs
- VCE(sat) negative temperature coefficient
- 3.3 V, 5 V, 15 V CMOS/TTL input comparators with hysteresis and pull-down / pull-up resistors ? Under voltage lockout
- Internal bootstrap diode
- Interlocking function
- Smart shutdown function
- Comparator for fault protection against over temperature and overcurrent
- DBC leading to low thermal resistance
- Isolation rating of 2500 Vrms/min
- UL Recognized: UL1557 file E81734
SKU: RM001241 -
IGBT
FSBB30CH60 IGBT Module – 600V 30A Power Conversion IGBT Module
Product Highlights:
- ? UL Certified No.E209204(SPM27-EA package)
- ? Very low thermal resistance due to using DBC
- ? 600V-30A 3-phase IGBT inverter bridge including control ICs for gate driving and protection
- ? Divided negative dc-link terminals for inverter current sensing applications
- ? Single-grounded power supply due to built-in HVIC
- ? Isolation rating of 2500Vrms/min.
SKU: RM001479
