NDT2955 belongs to the family of P-channel enhancement-mode field-effect transistors (FETs) that are manufactured by ON Semiconductor based on the advanced high-voltage Trench process. It features a high-density cell design for extremely low RDS (on), as well as high power and current handling capability in a widely used surface-mount package. Due to its high quality and reliable performance, it is well suited for power management applications. More information can be found in the NDT2955 datasheet.

NDT2955 Features:

• Advanced high-voltage Trench process
• High-density cell design 
• Extremely low RDS (on)
• High power and current handling capability
• Available in the SOT-223 package

NDT2955 Applications:

• DC-DC converter
  
• Power management