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Showing 2617–2640 of 4155 resultsSorted by price: low to high
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BC Series Transistors
BC142 NPN General Purpose Transistor (Pack of 5)
Product Highlights:
- Collector-Emitter Volt (Vceo): 60V.
- Collector-Base Volt (Vcbo): 80V.
- Collector Current (Ic): 1.0A.
- hfe: 100 @ 100mA.
- Power Dissipation (Ptot): 800mW.
- Current-Gain-Bandwidth (ftotal): 20MHz.
- Type: NPN.
SKU: RM001718 -
Operational Amplifier ICs
CA3140 Bi-CMOS Operational Amplifier
Product Highlights
- P-Channel MOSFET in Input Circuit for High Input Impedance
- CMOS Output Stage for Output to Either Supply Rails
- Offset Voltage: 5mV max
- Input Offset Current: 20pA
- Common Mode Rejection Ratio: 90 dB
- Slew Rate: 9 V/?s
- Low Supply Current: 6mA
SKU: RM002036 -
Boost Converter Step-Up
XL6009 DC-DC Step-Up Converter Performance Ultra LM2577 Booster Circuit Board
-11%
Boost Converter Step-UpXL6009 DC-DC Step-Up Converter Performance Ultra LM2577 Booster Circuit Board
Product Highlights:
- The performance is much higher than LM2577.
- Non-isolated Boost converter.
- It has a non-synchronous rectifier.
- Low ultra wide input voltage 3v-32v, the best is 5-32v working voltage range;
- Low ultra wide output voltage 5v-35v.
SKU: RM002386 -
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MJ Series Transistors
MJE340 NPN Bipolar Power Transistor 300V 500mA TO-126 Package (Pack of 5)
Product Highlights:-
- Transistor Polarity NPN
- Collector?Emitter Voltage (VCEO) 300V
- Collector?Base Voltage (VCBO) 300V
- Emitter?Base Voltage (VEBO) 3V
- Continuous Collector Current (Ic) 0.5A
- Power Dissipation (Pd) 20.8W
- Operating Temperature Range -65 – 150?C
- DC Current Gain (hFE) 30-240
SKU: RM005507 -
TIP Series Transistors
TIP35C NPN Power Amplifier Transistor 100V 25A TO-247 Package
Product Highlights:-
- Transistor Polarity NPN
- Collector?Emitter Voltage (VCEO) 100V
- Collector?Base Voltage (VCBO) 100V
- Continuous Collector Current (Ic) 25A
- Continuous Base Current (Ib) 5A
- Emitter Base Voltage (VEBO) 5V
- Power Dissipation (Pd) 125W
- Operating Temperature Range -65 – 150?C
- DC Current Gain (hFE) 10-50
SKU: RM005514 -
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MOSFETs
IRFBG30 MOSFET – 1000V 3.1A N-Channel Power MOSFET TO-220 Package
Product Highlights:
- Number of Channels 1 Channel
- Transistor Polarity N-Channel
- Drain-Source Breakdown Voltage (Vds) 1000V
- Continuous Drain Current (Id) 3.1A
- Drain-Source Resistance (Rds On) 5Ohms
- Gate-Source Voltage (Vgs) 20V
- Gate Charge (Qg) 80 nC
- Operating Temperature Range -55 – 150?C
- Power Dissipation (Pd) 125W
SKU: RM008245 -
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