Description:
P80NF55 power MOSFETs have been developed using STMicroelectronics? unique STripFET process, which is specifically designed to minimize input capacitance and gate charge. This renders the devices suitable for use as primary switches in advanced high-efficiency isolated DCDC converters for telecom and computer applications, and applications with low gate charge driving requirements.
Features:
- 100% avalanche tested
- Designed for automotive applications and AEC-Q101 qualified
- Low input capacitance and gate charge
- Low gate input resistance
Detailed Specifications:
- Number of Channels 1 Channel
- Transistor Polarity N-Channel
- Drain-Source Breakdown Voltage (Vds) 55V
- Continuous Drain Current (Id) 80A
- Drain-Source Resistance (Rds On) 8Ohms
- Gate-Source Voltage (Vgs) 20V
- Gate Charge (Qg) 155 nC
- Operating Temperature Range -55 – 175?C
- Power Dissipation (Pd) 300W
