MJE200 NPN Power Transistor 25V 5A TO-126 Package

SKU: RM005526

Availability:

In stock


Product Highlights:-

  • Transistor Polarity NPN
  • Collector?Emitter Voltage (VCEO) 40VDC
  • Collector?Base Voltage (VCBO) 25VDC
  • Emitter?Base Voltage (VEBO) 8VDC
  • Continuous Collector Current (Ic) 5ADC
  • Continuous Base Current (Ib) 1ADC
  • Power Dissipation (Pd) 15W
  • Operating Temperature Range -65 – 150?C
  • DC Current Gain (hFE) 45-180

34.00 (Incl. GST)

In stock

MJE200 is a three-layer NPN device within the working range, the collector current IC is a function of the base current IB, a change in the base current giving a corresponding amplified change in the collector current for a given collector-emitter voltage VCE.

Features:-

  • High DC gain
  • The low collector?emitter saturation voltage
  • High current?gain ? bandwidth product
  • Annular construction for low leakage
  • These devices are Pb?Free and are RoHS compliant
SKU: RM005526 Category:
Warehouse Code: R00021-S02-P02-Z01
Weight 1000000 g