IRG4BC30UD IGBT – 600V Ultrafast 8-60 kHz Copack IGBT
The IRG4BC30UD is an Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode. Its is designed to be a "drop-in" replacement for equivalent industry-standard Generation 3 IR IGBTs. It is optimized for specific application conditions. The generation 4 IGBTs offers the highest efficiencies available. The HEXFRED diodes optimized for performance with IGBTs and the minimized recovery characteristics require less/no snubbing.
Features of IRG4BC30UD IGBT – 600V Ultrafast 8-60 kHz Copack IGBT
- Ultrafast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200kHz in resonant mode
- Generation 4 IGBT design provides tighter para- meter distribution and higher efficiency than Generation 3
- IGBT co-packaged with HEXFREDTM ultrafast, ultra- soft-recovery anti-parallel diodes for use in bridge configurations
- Industry standard TO-220AB package
