Description:
IRFZ48N utilizes advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
Features:
- Advanced process technology
- Ultra Low On-Resistance
- Fully Avalanche Rated
- 175 ?C operating temperature
- Fast switching
Detailed Specifications:
- Number of Channels 1 Channel
- Transistor Polarity N-Channel
- Drain-Source Breakdown Voltage (Vds) 55V
- Continuous Drain Current (Id) 64A
- Drain-Source Resistance (Rds On) 0.014Ohms
- Gate-Source Voltage (Vgs) 20V
- Gate Charge (Qg) 81 nC
- Operating Temperature Range -55 – 175?C
- Power Dissipation (Pd) 130W
