Description:
IRFZ44N is specifically designed for Automotive applications, this HEXFET? Power MOSFET utilizes the latest processing techniques to achieve extremely low resistance per silicon area. Additional features of this design are a 175?C junction operating temperature, fast switching speed, and improved repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.
Features:
- Advanced Process Technology
- Ultra Low On-Resistance
- 175?C Operating Temperature
- Fast Switching
- Repetitive Avalanche Allowed up to Tjmax
- Lead-Free, RoHS Compliant
Detailed Specifications:
- Number of Channels 1 Channel
- Transistor Polarity N-Channel
- Drain-Source Breakdown Voltage (Vds) 55V
- Continuous Drain Current (Id) 49A
- Drain-Source Resistance (Rds On) 0.0175Ohms
- Gate-Source Voltage (Vgs) 20V
- Gate Charge (Qg) 63 nC
- Operating Temperature Range -55 – 175?C
- Power Dissipation (Pd) 94W
