Description:
IRFP2907 is Specifically designed for Automotive applications, this Stripe Planar design of HEXFET? Power MOSFETs utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this HEXFET power MOSFET are a 175?C junction operating temperature, fast switching speed, and improved repetitive avalanche rating. These benefits combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.
Features:
- Advanced process technology
- Ultra-low on-resistance
- Dynamic dv/dt rating
- Fast switching
- Repetitive avalanche allowed up to Tjmax
Detailed Specifications:
- Number of Channels 1 Channel
- Transistor Polarity N-Channel
- Drain-Source Breakdown Voltage (Vds) 75V
- Continuous Drain Current (Id) 209A
- Drain-Source Resistance (Rds On) 4.5mOhms
- Gate-Source Voltage (Vgs) 20V
- Gate Charge (Qg) 620 nC
- Operating Temperature Range -55 – 175?C
- Power Dissipation (Pd) 470W
