IRFBF20 MOSFET – 900V 1.7A N-Channel Power MOSFET TO-220 Package
Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-247AC package is preferred for commercial-industrial applications where higher power levels preclude the use of TO-220AB devices. The TO-247AC is similar but superior to the earlier TO-218 package because of its isolated mounting hole. It also provides greater creepage distance between pins to meet the requirements of most safety specifications.
Specifications of IRFBF20 MOSFET – 900V 1.7A N-Channel Power MOSFET TO-220 Package :
- Drain-Source Breakdown Voltage min : 900V
- Temperature Coefficient type : 1.1V/?C
- Gate-Source Threshold Voltage min : 2.0V
- Gate-Source Threshold Voltage max : 4.0V
- Gate-Source Leakage max : +100nA
- Drain-Source On-State Resistance : 8.0?
- Forward Transconductance min : 0.60S
