Description:
IRFBE30 is a new generation of high voltage MOSFET family that utilizes an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. This advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. It is very suitable for various AC/DC power conversions in switching mode operation for system miniaturization and higher efficiency.
Features:-
- Dynamic dV/dt rating
- Repetitive avalanche rated
- Fast switching
- Ease of paralleling
- Simple Drive Requirements
- Compliant to RoHS Directive 2002/95/EC
Detailed Specifications:-
- Number of Channels 1 Channel
- Transistor Polarity N-Channel
- Drain-Source Breakdown Voltage (Vds) 800V
- Continuous Drain Current (Id) 4.1A
- Drain-Source Resistance (Rds On) 3Ohms
- Gate-Source Voltage (Vgs) 20V
- Gate Charge (Qg) 78 nC
- Operating Temperature Range -55 – 150?C
- Power Dissipation (Pd) 125W
