IRF440 MOSFET – 500V 8.8A N-Channel Power MOSFET TO-247 Package
Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-247AC package is preferred for commercial-industrial applications where higher power levels preclude the use of TO-220AB devices. The TO-247AC is similar but superior to the earlier TO-218 package because of its isolated mounting hole. It also provides greater creepage distance between pins to meet the requirements of most safety specifications.
Specifications of RF244 MOSFET – IRF440 MOSFET – 500V 8.8A N-Channel Power MOSFET TO-247 Package :
- Drain-Source Breakdown Voltage min : 500V
- Temperature Coefficient type : 0.78V/?C
- Gate-Source Threshold Voltage min : 2.0V
- Gate-Source Threshold Voltage max : 4.0V
- Gate-Source Leakage max : +100nA
- Drain-Source On-State Resistance : 0.85?
- Forward Transconductance min : 5.34S
