The H11FXM series consists of a Gallium-Aluminum-Arsenide IRED emitting diode coupled to a symmetrical bilateral silicon photo-detector. The detector is electrically isolated from the input and performs like an ideal isolated FET designed for distortion-free control of low-level AC and DC analog signals. The H11FXM series devices are mounted in dual in-line packages.
Applications:
- Consumer Appliances
- Industrial Motor
Features:
As a remote variable resistor:
? 100? to ? 300M?
? 15pF shunt capacitance
? 100G? I/O isolation resistance as an analog switch:
Extremely low offset voltage
60 Vpk-pk signal capability
No charge injection or latch-up
UL recognized (File #E90700)
