BF259 NPN High Voltage Transistor (Pack Of 2)

SKU: RM001767

Availability:

In stock


Product Highlights:

  • Collector-Emitter Volt (Vceo): 300V.
  • Collector-Base Volt (Vcbo): 300V.
  • Collector Current (Ic): 0.1A.
  • hfe: 25 @ 30mA.
  • Power Dissipation (Ptot): 5 W.
  • Current-Gain-Bandwidth (ftotal): 90MHz.
  • Type: NPN.

24.00 (Incl. GST)

In stock

The transistor is a 3 terminal & 2 junction semiconductor device which is used for switching or amplifying purposes.

Features of BF259 NPN High Voltage Transistor:

  • Collector-Emitter Volt (Vceo): 300V.
  • Collector-Base Volt (Vcbo): 300V.
  • Collector Current (Ic): 0.1A.
  • hfe: 25 @ 30mA.
  • Power Dissipation (Ptot): 5 W.
  • Current-Gain-Bandwidth (ftotal): 90MHz.
  • Type: NPN.

Applications of BF259 NPN High Voltage Transistor:

  • It is used in switching device.
  • It is used in amplifying device.
  • It is used in DIY kits.
  • FM Radio.
  • It is used in Electronic projects.

Also Searched as : N channel MOSFET, BF259 MOSFET.

SKU: RM001767 Category:
Warehouse Code: R00009-S07-P06-Z01
Weight 995 g