2SK2717 MOSFET – 900V 5A N-Channel Power MOSFET TO-220F Package
2SK2717 MOSFET N-Channel enhancement mode power field effect transistors are produced using Toshiba proprietary, planar stripe ,DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance , provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supplies.
Specifications of 2SK2717 MOSFET – 900V 5A N-Channel Power MOSFET TO-220F Package :
- Drain-Source Breakdown Voltage min : 900V
- Gate-Source Threshold Voltage min : 2.0V
- Gate-Source Threshold Voltage max : 4.0V
- Gate-Source Leakage max : +100nA
- Drain-Source On-State Resistance : 2.50?
