2SK2611 MOSFET – 900V 9A N-Channel Power MOSFET TO-3PN Package
2SK2611 utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
Specifications of 2SK2611 MOSFET – 900V 9A N-Channel Power MOSFET TO-3PN Package :
- Drain-Source Breakdown Voltage min : 900V
- Gate-Source Threshold Voltage min : 2.0V
- Gate-Source Threshold Voltage max : 4.0V
- Gate-Source Leakage max : +100nA
- Drain-Source On-State Resistance : 1.10?
