2N6052 is Preferred Device Darlington Complementary Silicon Power Transistors This package is designed for general-purpose amplifier and low-frequency switching applications.
Features
- Collector-Emitter Volt (Vceo): 100V
- Collector-Base Volt (Vcbo): 100V
- Collector Current (Ic): 12.0A
- hfe: 750-18,000 @ 6.0A
- Power Dissipation (Ptot): 150W
- Type: PNP
