2N Series Transistors

Product Highlights 

• Collector-Emitter Volt (Vceo): 80V
• Collector-Base Volt (Vcbo): 80V
• Collector Current (Ic): 1.0A
• hfe: 100-300 @ 100mA
• Power Dissipation (Ptot): 800mW
• Current-Gain-Bandwidth (ftotal): 500MHz
• Type: PNP

Product Highlights

• Collector-Emitter Volt (Vceo): 65V
• Collector-Base Volt (Vcbo): 90V
• Collector Current (Ic): 1.0A
• hfe: 20-200 @ 150mA
• Power Dissipation (Ptot): 1000mW
• Current-Gain-Bandwidth (ftotal): 60MHz
• Type: PNP

Product Highlights 

• Collector-Emitter Volt (Vceo): 30V
• Collector-Base Volt (Vcbo): 30V
• Collector Current (Ic): 0.2A
• hfe: 50-150 @ 2mA
• Power Dissipation (Ptot): 625mW
• Current-Gain-Bandwidth (ftotal): –
• Type: PNP

Product Highlights 

• With TO-126 package
• Complement to type 2N4918,2N4919 2N4920
• Excellent safe operating area
• Low collector-emitter saturation voltage

Product Highlights 

• Collector-Emitter Volt (Vceo): 75V
• Collector-Base Volt (Vcbo): 100V
• Collector Current (Ic): 1.2A
• hfe: 30-130 @ 500mA
• Power Dissipation (Ptot): 1000mW
• Current-Gain-Bandwidth (ftotal): 50MHz
• Type: NPN

Product Highlights 

• Collector-Emitter Volt (Vceo): 200V
• Collector-Base Volt (Vcbo): 200V
• Collector Current (Ic): 1.0A
• hfe: 30-150 @ 50mA
• Power Dissipation (Ptot): 1000mW
• Current-Gain-Bandwidth (ftotal): 15MHz
• Type: NPN

Product Highlights 

• Programmable ? RBB, , IV and IP
• Low On?State Voltage ? 1.5 V Maximum @ IF = 50 mA
• Low Gate to Anode Leakage Current ? 10 nA Maximum
• High Peak Output Voltage ? 11 V Typical
• Low Offset Voltage ? 0.35 V Typical (RG = 10 k)

Product Highlights

• Collector-Emitter Volt (Vceo): 40V
• Collector-Base Volt (Vcbo): 40V
• Collector Current (Ic): 0.5A
• hfe: 30,000-300,000 @ 100mA
• Power Dissipation (Ptot): 625mW
• Type: NPN

Product Highlights 

• Collector-Emitter Volt (Vceo): 40V
• Collector-Base Volt (Vcbo): 65V
• Collector Current (Ic): 1.0A
• hfe: 15-200 @ 125mA
• Power Dissipation (Ptot): 7000mW
• Current-Gain-Bandwidth (ftotal): 500MHz
• Type: NPN