2N Series Transistors

Product Highlights:

• Collector-Emitter Volt (Vceo): 40V.
• Collector-Base Volt (Vcbo): 60V.
• Collector Current (Ic): 0.6A.
• hfe: 100-300 at 150mA.
• Power Dissipation (Ptot): 600mW.
• Current-Gain-Bandwidth (ftotal): 200MHz.

Product Highlights:

• Collector-Emitter Volt (Vceo): 25V.
• Collector-Base Volt (Vcbo): 30V.
• Collector Current (Ic): 600mA.
• Power Dissipation (Ptot): 350mW.
• Current-Gain-Bandwidth (ftotal): 650MHz.
• Type: NPN.

Product Highlights

• Collector-Emitter Volt (Vceo): 15V
• Collector-Base Volt (Vcbo): 40V
• Collector Current (Ic): 0.2A
• hfe: 40-120 @ 10mA

Product Highlights

• Collector-Emitter Volt (Vceo): 350V
• Collector-Base Volt (Vcbo): 350V
• Collector Current (Ic): 0.5A
• hfe: 30-200 @ 30mA
• Power Dissipation (Ptot): 625mW
• Current-Gain-Bandwidth (ftotal): 40MHz
• Type: NPN

Product Highlights 

• Collector-Emitter Volt (Vceo): 160V
• Collector-Base Volt (Vcbo): 180V
• Collector Current (Ic): 0.6A
• hfe: 80-250 @ 10mA
• Power Dissipation (Ptot): 625mW
• Current-Gain-Bandwidth (ftotal): 300MHz
• Type: NPN