The P55NF06 is three-terminal N-channel silicon MOSFET with current conduction capability of about 50A, fast switching speed. Low on-state resistance, breakdown voltage rating of 60V, and max threshold voltages of 4 volt.

Features of N Channel MOSFET (P55NF06):

• Type: N channel.
• It is mainly suitable electro RDS(ON) = 23m@VGS = 10 V
• Ultra low gate charge ( typical 30 nC )
• Current Drain: 50A
• Low reverse transfer capacitance ( CRSS = typical 80 pF )
• Fast switching capability
• 100% avalanche energy specified
• Improved dv/dt capability

Applications of N Channel MOSFET (P55NF06):

• It is mainly suitable electronic ballast, and low power switchingmode power appliances.
• Automobile Convert System
• Networking DC-DC Power System
• Power Supply etc.

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