The 2N4032 is a PNP silicon Bipolar Transistor designed primarily for amplifier and switching applications. The device features high breakdown voltage, low leakage current, low capacity and beta useful over an extremely wide current range.
Features
- Collector-Emitter Volt (Vceo): 60V
- Collector-Base Volt (Vcbo): 60V
- Collector Current (Ic): 0.1A
- hfe: 40-120 @ 10mA
- Power Dissipation (Ptot): –
- Current-Gain-Bandwidth (ftotal): 100MHz
- Type: PNP
