2SK1317 MOSFET – 1500V 2.5A N-Channel Power MOSFET TO-3P Package
2SK1317 utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
Specifications of 2SK1317 MOSFET – 1500V 2.5A N-Channel Power MOSFET TO-3P Package ;
- Drain-Source Breakdown Voltage min : 1500V
- Temperature Coefficient type : 0.37V/?C
- Gate-Source Threshold Voltage min : 2.0V
- Gate-Source Threshold Voltage max : 4.0V
- Gate-Source Leakage max : +100nA
- Drain-Source On-State Resistance : 120?
