Description:
P30NF10 is a power MOSFET and is the latest development of STMicroelectronics’ unique "Single Feature Size?" strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics, and less critical alignment steps therefore a remarkable manufacturing reproducibility.
Features:
- Exceptional dv/dt capability
- 100% avalanche tested
- Application-oriented characterization
- Switching application
Detailed Specifications:
- Number of Channels 1 Channel
- Transistor Polarity N-Channel
- Drain-Source Breakdown Voltage (Vds) 100V
- Continuous Drain Current (Id) 35A
- Drain-Source Resistance (Rds On) 0.045Ohms
- Gate-Source Voltage (Vgs) 20V
- Gate Charge (Qg) 55 nC
- Operating Temperature Range -55 – 175?C
- Power Dissipation (Pd) 115W
